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| CD4069UBMS December 1992 CMOS Hex Inverter Pinout CD4069UBMS TOP VIEW Features * High Voltage Types (20V Rating) * Standardized Symmetrical Output Characteristics * Medium Speed Operation: tPHL, tPLH = 30ns (typ) at 10V * 100% Tested for Quiescent Current at 20V * Maximum Input Current of 1A at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC * Meets All Requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications for Description of `B' Series CMOS Devices" A1 G=A 2 B3 H=B 4 C5 I=C 6 VSS 7 14 VDD 13 F 12 L = F 11 E 10 K = E 9D 8 J=D Applications * Logic Inversion * Pulse Shaping * Oscillators * High-Input-Impedance Amplifiers Functional Diagram 1 A 2 G=A Description CD4069UBMS types consist of six CMOS inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logiclevel conversion capabilities of circuits such as the CD4009 and CD4049 Hex Inverter/Buffers are not required. The CD4069UBMS is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4H H1B VSS = 7 B 3 4 H=B 5 C 6 I=C 9 D 8 J=D 11 E 10 K=E H3W VDD = 14 13 F 12 L=F Schematic Diagram VDD VDD A 1(3, 5, 9, 11, 13) G=A G 2(4, 6, 8, 10, 12) VSS FIGURE 1. SCHEMATIC DIAGRAM OF 1 OF 6 IDENTICAL INVERTERS CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 File Number 3321 7-464 Specifications CD4069UBMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, +25oC, LIMITS TEMPERATURE +25oC +125 oC PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND MIN -100 -1000 -100 - MAX 0.5 50 0.5 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8 UNITS A A A nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V -55oC +25 C +125oC -55oC +25oC +125oC -55oC +125oC, +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +125oC, -55oC -55oC o - +25oC, +125oC, -55oC 14.95 0.53 1.4 3.5 -2.8 0.7 VOH > VOL < VDD/2 VDD/2 4.0 12.5 1.0 2.5 - V V V V +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 7-465 Specifications CD4069UBMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 110 149 200 270 UNITS ns ns ns ns PARAMETER Propagation Delay SYMBOL TPHL TPLH TTHL TTLH CONDITIONS (NOTES 1, 2) VDD = 5V, VIN = VDD or GND Transition Time +25oC +125oC, -55oC NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55 C, +25 C +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125 VDD = 15V, VIN = VDD or GND 1, 2 -55oC, oC o o MIN 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 8 MAX 0.25 7.5 0.5 15 0.5 30 50 50 -0.36 -0.64 -1.15 -2.0 -0.9 -2.6 -2.4 -4.2 2 - UNITS A A A A A A mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA V V +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125 C -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC -55oC Input Voltage Low Input Voltage High VIL VIH VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC o 7-466 Specifications CD4069UBMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Propagation Delay SYMBOL TPHL TPLH TTHL TTLH CIN CONDITIONS VDD = 10V VDD = 15V VDD = 10V VDD = 15V Any Input NOTES 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC +25 C +25oC +25 oC o MIN - MAX 60 50 100 80 15 UNITS ns ns ns ns pF Transition Time Input Capacitance NOTES: +25oC 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VTN VTP VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10A VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VSS = 0V, IDD = 10A VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 2.5 -0.2 1 2.8 1 VOL < VDD/2 1.35 x +25oC Limit UNITS A V V V V V ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current - SSI Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A 0.1A 20% x Pre-Test Reading 20% x Pre-Test Reading DELTA LIMIT TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A 7-467 Specifications CD4069UBMS TABLE 6. APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 (Note 1) Static Burn-In 2 (Note 1) Dynamic Burn-In (Note 1) Irradiation (Note 2) NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K 5%, VDD = 18V 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V 0.5V OPEN 2, 4, 6, 8, 10, 12 2, 4, 6, 8, 10, 12 2, 4, 6, 8, 10, 12 GROUND 1, 3, 5, 7, 9, 11, 13 7 7 7 VDD 14 1, 3, 5, 9, 11, 13, 14 14 1, 3, 5, 9, 11, 13, 14 2, 4, 6, 8, 10, 12 1, 3, 5, 9, 11, 13 9V -0.5V 50kHz 25kHz Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC OUTPUT VOLTAGE (VO) (V) OUTPUT VOLTAGE (VO) (V) SUPPLY VOLTAGE (VDD) = 15V 15.0 12.5 10V 10.0 7.5 5V 5.0 2.5 0 VI VO 17.5 15.0 12.5 10V 10.0 +125oC 7.5 5V 5.0 2.5 +125oC -55oC -55oC SUPPLY VOLTAGE (VDD) = 15V AMBIENT TEMPERATURE (TA) = +125oC -55oC 0 2.5 5.0 7.5 10.0 12.5 INPUT VOLTAGE (VI) (V) 15.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 INPUT VOLTAGE (VI) (V) FIGURE 2. MINIMUM AND MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS FIGURE 3. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS AS A FUNCTION OF TEMPERATURE All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 468 CD4069UBMS Typical Performance Characteristics (Continued) 17.5 15.0 12.5 10V 10.0 7.5 5V 5.0 2.5 5V 0 2.5 5.0 7.5 10.0 12.5 15.0 INPUT VOLTAGE (VI) (V) 10V 5.0 2.5 0 ID 15V 7.5 AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 15V 17.5 15.0 SUPPLY CURRENT (IDD) (mA) 12.5 10.0 OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC OUTPUT VOLTAGE (VO) (V) 30 25 20 15 10 5 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 10V 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 4. TYPICAL CURRENT AND VOLTAGE TRANSFER CHARACTERISTICS) AMBIENT TEMPERATURE (TA) = +25oC FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V OUTPUT LOW (SINK) CURRENT (IOL) (mA) 0 0 -5 -10 -15 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 7.5 5.0 10V -10V -20 -25 -15V 2.5 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -30 FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS PROPAGATION DELAY TIME (tPLH, tPHL) (ns) AMBIENT TEMPERATURE (TA) = +25oC 100 SUPPLY VOLTAGE (VDD) = 5V 80 0 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 60 10V 40 15V 20 -10V -10 -15V -15 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 8. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS FIGURE 9. TYPICAL PROPAGATION DELAY TIME vs LOAD CAPACITANCE 7-469 CD4069UBMS Typical Performance Characteristics (Continued) PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (tTHL, tTLH) (ns) AMBIENT TEMPERATURE (TA) = +25oC 120 100 80 60 40 20 15pF 0 5 10 15 SUPPLY VOLTAGE (VDD) (V) 20 200 SUPPLY VOLTAGE (VDD) = 5V 150 100 10V 50 15V LOAD CAPACITANCE (CL) = 50pF 0 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 10. TYPICAL PROPAGATION DELAY TIME vs SUPPLY VOLTAGE 105 8 POWER DISSIPATION PER INVERTER (W) 6 4 2 FIGURE 11. TYPICAL TRANSITION TIME vs LOAD CAPACITANCE NORMALIZED PROPAGATION DELAY TIME (tPHL, tPLH) AMBIENT TEMPERATURE (TA) = -40oC TO +125oC 5 SUPPLY VOLTAGE (VDD) = 15V 104 8 6 4 2 4 103 8 6 4 2 10V 10V 5V 3 2 102 8 6 4 2 10 2 4 68 LOAD CAPACITANCE (CL) = 50pF (11pF FIXTURE + 39pF EXT) CL = 15pF (11pF FIXTURE +4pF EXT) AMBIENT TEMPERATURE (TA) = +25oC 103 104 102 INPUT FREQUENCY (fI) (kHz) 2 4 68 2 4 68 2 4 68 1 10 105 2 4 6 8 10 12 SUPPLY VOLTAGE (VDD) VOLTS 14 16 FIGURE 12. TYPICAL DYNAMIC POWER DISSIPATION vs FREQUENCY VDD FIGURE 13. VARIATION OF NORMALIZED PROPAGATION DELAY TIME (tPHL AND tPLH) WITH SUPPLY VOLTAGE 1 2 3 PULSE GEN. tr = tf = 20ns IN 4 5 6 50 7 14 13 12 11 10 9 8 OUT INVERTING OUTPUT tPHL tPLH 90% 50% 10% INPUT tr tf 90% 50% 10% tTHL tTLH VDD 0 VDD CL = 50pF 200k 0 FIGURE 14. DYNAMIC ELECTRICAL CHARACTERISTICS TEST CIRCUIT AND WAVEFORMS 7-470 CD4069UBMS 1/3 CD4069 1/6 CD4069 IN OUT RS RT CT Rf 10 MEG FOR TYPICAL COMPONENT VALUES AND CIRCUIT PERFORMANCE, SEE APPLICATION NOTE AN-6466 FIGURE 15. HIGH-INPUT IMPEDANCE AMPLIFIER FIGURE 16. TYPICAL RC OSCILLATOR CIRCUIT 1/3 CD4069 RS 1/6 CD4069 FOR TYPICAL COMPONENT VALUES AND CIRCUIT PERFORMANCE, SEE APPLICATION NOTES: AN-6086 AND AN-6539 RS IN OUT Rf Rf UPPER SWITCHING POINT VP RS + Rf Rf VDD XTAL CS CT 2 * LOWER SWITCHING POINT VN Rf - RS Rf Rf > RS * VDD 2 FIGURE 17. TYPICAL CRYSTAL OSCILLATOR CIRCUIT FIGURE 18. INPUT PULSE SHAPING CIRCUIT (SCHMITT TRIGGER) Chip Dimensions and Pad Layout 6 5 4 3 2 7 1 DIE SIZE: 48 X 48 (45 - 53) (1.143 - 1.346) 14 8 13 9 10 11 12 Dimension in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kA - 14kA, AL. 10.4kA - 15.6kA, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches 7-471 |
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